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Matthias Marx, M.Sc.


Matthias Marx, M.Sc.,
geb. Finken

Matthias MarxKontakt

Matthias Marx
Compound Semiconductor Technology (CST)
RWTH Aachen University
Sommerfeldstraße 18
52074 Aachen

Telefon: +49 241 80 27748
Fax: +49 241 80 22495
E-Mail: marx@gan.rwth-aachen.de

Dienstort

Gebäude Walter-Schottky-Haus
Raum 24 B 408

 

Publikationen

Publications in Reviewed Journals

M. Marx, S. Nordmann, J. Knoch, C. Franzen, C. Stampfer, D. Andrzejewski, T. Kümmell, G. Bacher, M. Heuken, H. Kalisch and A. Vescan
Large-Area MoS2 Deposition via MOVPE
J. Cryst. Growth, DOI: 10.1016/j.jcrysgro.2016.11.020

Hady Yacoub, Dirk Fahle, Matthias Finken, Herwig Hahn, Christian Blumberg, Werner Prost, Holger Kalisch, Michael Heuken and Andrei Vescan
The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
Semiconductor Science and Technology, Vol 29. No. 11 pages115012, DOI: 10.1088/0268-1242/29/11/115012

M. Finken, A. Wille, B. Reuters, B. Holländer, M. Heuken, H. Kalisch, A. Vescan
Growth Properties and Electrochemical Characterization of InGaN photoanodes with different In concentrations
Phys. Status Solidi C 11, No. 3–4, 746–749 (2014) / DOI: 10.1002/pssc.201300414

B. Reuters, J. Strate, H. Hahn, M. Finken, A. Wille, M. Heuken, H. Kalisch, A. Vescan
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
J. Cryst. Growth 391 (2014) 33-40, DOI: 10.1016/j.jcrysgro.2014.01.002

Ada Wille, B. Reuters, M. Finken, F. Heyroth, G. Schmidt, M. Heuken, H. Kalisch, A. Vescan
Strain relief mechanisms and growth behaviour of superlattice distributed Bragg reflectors
Phys. Stat. Solidi C 11, No. 3-4, 758-761 (2014) / DOI: 10.1002/pssc.201300444

B. Reuters, M. Finken, A. Wille, B. Holländer, M. Heuken, H. Kalisch, A. Vescan
Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy
Journal of Applied Physics 112, 093524 (2012)


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