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List of Publications


[ 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 and earlier ]

2016

  • M. Marx, S. Nordmann, J. Knoch, C. Franzen, C. Stampfer, D. Andrzejewski, T. Kümmell, G. Bacher, M. Heuken, H. Kalisch and A. Vescan
    Large-Area MoS2 Deposition via MOVPE
    J. Cryst. Growth, DOI: 10.1016/j.jcrysgro.2016.11.020

  • Martin Weingarten, Thorsten Zweipfennig, Simon Sanders, Dominik Stümmler, Pascal Pfeiffer, Andrei Vescan, and Holger Kalisch
    Investigation of organic semiconductor interlayers in hybrid PEDOT:PSS/silicon solar cells
    J. Photon. Energy, Volume 6, Issue 4, DOI: 10.1117/1.JPE.6.045503

  • G. Lükens, H. Yacoub, H. Kalisch, A. Vescan
    Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments
    Journal of Applied Physics, Volume 119, Issue 20, Pages 119, DOI: 10.1063/1.4952382

  • Martin Weingarten, Simon Sanders, Dominik Stümmler, Pascal Pfeiffer, Andrei Vescan, Holger Kalisch
    Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells
    J. Photon. Energy, Volume 6, Issue 2, DOI: 10.1117/1.JPE.6.025504

  • H. Yacoub, D.Fahle, M. Eickelkamp, A. Wille, C. Mauder, M. Heuken, H. Kalisch, A. Vescan
    Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
    Journal Of applied Physics, Volume 119, Issue 13, DOI: 10.1063/1.4944885

  • P. Pfeiffer, D. Stümmler, S. Loginkin, M. Heuken, A. Vescan, H. Kalisch
    Transparent Ag-Free OLED Fabricated by OVPD Using Thin Au Contacts
    MRS advances, DOI: 10.1557/adv.2016.157

  • E. V. Lutsenko, M. V. Rzheutski, V. N. Pavlovskii, A. Alyamani, M. Aljohenii, A. Aljerwii, C. Mauder, B. Reuters, H. Kalisch, M. Heuken and A. Vescan
    INF LUENCE OF BAND TAILING ON PHOTO- AND ELECTROLUMINESCENCE POLARIZATION OF m-PLANE InGaN/GaN QUANTUM WELL HETEROSTRUCTURES
    Journal of applied spectroscopy, Volume 82, Issue 6, Pages 956-960 (2016), DOI: 10.1007/s10812-016-0211-7

  • H. Hahn, C. Funck, S. Geipel, H. Kalisch, A. Vescan
    The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices
    IEEE Transactions on Electron Devices, Volume 63, Issue 2, Pages 606-616 (2016), DOI: 10.1109/TED.2015.2509942

2015

  • B. Reuters, J. Strate, A. Wille, M. Marx, G. L³kens, L. Heuken, M. Heuken, H. Kalisch and A Vescan
    Semi-polar {1-101} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (100)
    Journal of Physics D: Applied Physics, Volume 48, Issue 48, Pages 481503, DOI: 10.1088/0022-3727/48/48/485103

  • M. Weingarten, T. Zweipfennig, A. Vescan and H. Kalisch
    Low-Temperature Processed Hybrid Organic/Silicon Solar Cells with Power Conversion Efficiency up to 6.5%
    MRS Proceedingsá, Volume 1771, DOI: 10.1557/opl.2015.650

  • M. Brast, S. Axmann, M. Slawinski, M. Weingarten, F. Lindla, M. Bösing, M. Heuken, A. Vescan and H. Kalisch
    Efficient Stacked OLED processed by Organic Vapor Phase Deposition (OVPD)
    MRS Proceedingsá, Volume 1788, DOI: 10.1557/opl.2015.508

  • H. Hahn, B. Pécz, A. Kovacs, M. Heuken, H. Kalisch, and A. Vescan
    Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers
    J. Appl. Phys., Volume 117, Issue 22, (2015), DOI: 10.1063/1.4921867

  • H. Koch, T. Niebling, I. Pietzonka, D. Scholz, H. Kalisch, A. Vescan, and H.-J. Lugauer
    Advanced thin-film chip concepts for efficient InGaN solar cells
    Phys. Status Solidi A, Volume 1-6, (2015), DOI: 10.1002/pssa.201532064

  • H. Hahn, B. Reuters, S. Geipel, M. Schauerte, F. Benkhelifa, O. Ambacher, H. Kalisch, and A. Vescan
    Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
    J. Appl. Phys., Volume 117, Issue 10, (2015), DOI: 10.1063/1.4913857

  • Holger Koch, Ines Pietzonka, Bastian Galler, Martin Strassburg, Holger Kalisch, Andrei Vescan, Hans-Juergen Lugauer
    Effect of antimony on growth mode and properties of thick InGaN layers
    J. Cryst. Growth, Volume 414, Pages 42-48 (2015), DOI: 10.1016/j.jcrysgro.2014.10.041

  • Matthias Finken, Ada Wille, Benjamin Reuters, Michael Heuken, Holger Kalisch and Andrei Vescan
    Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes
    Phys. Status Solidi B, Volume 252, Issue 5, Pages 895-889 (2015), DOI: 10.1002/pssb.201451576

  • H. Hahn, F. Benkhelifa, O. Ambacher, F. Brunner, A. Noculak, H. Kalisch, and A. Vescan
    Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study with the Threshold Voltage Reaching More Than +2V
    IEEE Trans. Electron Devices , Volume 62, Issue 2, Pages 538-545 (2015), DOI: 10.1109/TED.2014.2381292

  • A. Wille, H. Yacoub, A. Debald, H. Kalisch, A. Vescan
    AlGaN/AlN-GaN-SL HEMT with multiple 2DEG channels
    Published online at Journal of Electronic Materials (special EMC issue); DOI: 10.1007/s11664-014-3474-x

2014

  • Holger Koch, Frank Bertram, Ines Pietzonka, Jan-Philipp Ahl, Martin Strassburg, Olga August, Jürgen Christen, Holger Kalisch, Andrei Vescan, and Hans-Jürgen Lugauer
    InGaN: Direct correlation of nanoscopic morphology features with optical and structural properties
    Appl. Phys. Lett. 105, 072108 (2014); DOI: 10.1063/1.4893663

  • Hady Yacoub, Dirk Fahle, Matthias Finken, Herwig Hahn, Christian Blumberg, Werner Prost, Holger Kalisch, Michael Heuken and Andrei Vescan
    The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
    Semiconductor Science and Technology, Vol 29. No. 11 pages115012, doi:10.1088/0268-1242/29/11/115012

  • M. Slawinski, F. Merget, M. Brast, X. D. Zhang, M. Heuken, J. Witzens, A. Vescan and H. Kalisch
    Improved Light Outcoupling from OLED by Non-Wave-Guiding Anode Designs
    MRS Proceedings / Volume 1627 / 2014, DOI: 10.1557/opl.2014.191

  • Sebastian Axmann ; Michael Brast ; Ajay Kumar Pandey ; Paul Burn ; Paul Meredith ; Michael Heuken ; Andrei Vescan ; Holger Kalisch
    Pentacene/K12 solar cells formed by organic vapor phase deposition
    J. Photon. Energy. 4(1), 043092 (Aug 08, 2014). DOI: 10.1117/1.JPE.4.043092

  • B. Reuters, H. Hahn, A. Pooth, B. Holländer, U. Breuer, M. Heuken, H. Kalisch, A. Vescan
    Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces
    J. Phys. D: Appl. Phys. 47 (2014) 175103

  • M. Finken, A. Wille, B. Reuters, B. Holländer, M. Heuken, H. Kalisch, A. Vescan
    Growth Properties and Electrochemical Characterization of InGaN photoanodes with different In concentrations
    Phys. Status Solidi C 11, No. 3–4, 746–749 (2014) / DOI: 10.1002/pssc.201300414

  • H. Hahn, B. Reuters, A. Pooth, H. Kalisch, A. Vescan
    Characterisation of GaN-based p-channel device structures at elevated temperatures
    Semicond. Sci. Technol. 29 (2014) 075002

  • B. Reuters, J. Strate, H. Hahn, M. Finken, A. Wille, M. Heuken, H. Kalisch, A. Vescan
    Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
    J. Cryst. Growth 391 (2014) 33-40, DOI: 10.1016/j.jcrysgro.2014.01.002

  • Dirk Fahle, Thomas Kruecken, Martin Dauelsberg, Holger Kalisch, Michael Heuken, Andrei Vescan
    In-situ decomposition and etching of AlN and GaN in the presence of HCl
    Journal of Crystal Growth 393 (2014) 89–92, DOI: 10.1016/j.jcrysgro.2013.09.025

  • Ada Wille, B. Reuters, M. Finken, F. Heyroth, G. Schmidt, M. Heuken, H. Kalisch, A. Vescan
    Strain relief mechanisms and growth behaviour of superlattice distributed Bragg reflectors
    Phys. Stat. Solidi C 11, No. 3-4, 758-761 (2014) / DOI: 10.1002/pssc.201300444

2013

2012

2011

  • H. Hahn, G. Lükens, N. Ketteniss, H. Kalisch, A. Vescan
    Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance
    Applied Physics Express 4 (2011) 11, 114102

  • C. Mauder, E. V. Lutsenko, M. V. Rzheutski, B. Reuters, V. Z. Zubialevich, V. N. Pavlovskii, G. P. Yablonskii, M. Heuken, H. Kalisch, A. Vescan
    Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2
    Appl. Phys. Lett. 99, 232114 (2011)

  • M. Eickelkamp, M. Weingarten, L. Rahimzadeh Khoshroo, N. Ketteniss, H. Behmenburg, M. Heuken, D. Donoval, A. Chvála, P. Kordoš, H. Kalisch, A. Vescan
    Electrical Properties of Thermally Oxidized AlInN/AlN/GaN-based Metal Oxide Semiconductor Hetero Field Effect Transistors (MOSHFET)
    J. Appl. Phys. 110, 084501 (2011)

  • C. Netzel, C. Mauder, T. Wernicke, B. Reuters, H. Kalisch, M. Heuken, A. Vescan, M. Weyers, M. Kneissl
    Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
    Semiconductor Science and Technology 26, 105017 (2011)

  • E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo, H. Kalisch, M. Heuken, A. Vescan, M. Röppischer, C. Cobet, G. Gobsch, R. Goldhahn
    Dielectric function and optical properties of quaternary AlInGaN alloys
    J. Appl. Phys. 110, 013102 (2011)

  • F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, V. Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, J.-C. De Jaeger
    InAlN/GaN HEMTs on Sapphire Substrate with 2.9 W/mm Output Power Density at 18 GHz
    Electron Device Letters 32, Vol. 07, 1340 (2011)

  • S. Miasojedovas, C. Mauder, S. Krotkus, A. Kadys, T. Malinauskas, K. Jarašiūnas, M. Heuken, H. Kalisch, A. Vescan
    High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates
    Journal of Crystal Growth 329, 33-38 (2011)

  • J.-P. Ahl, H. Behmenburg, C. Giesen, I. Regolin, W. Prost, F. J. Tegude, G. Z. Radnoczi, B. Pécz, H. Kalisch, R. H. Jansen, M. Heuken
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    physica status solidi (c) 8, 2315-2317 (2011)

  • Ö.Tuna, H. Behmenburg, C. Giesen, H. Kalisch, R. H. Jansen, G. P. Yablonskii, M. Heuken
    Dependence of InN properties on MOCVD growth parameters
    Phys. Status. Solidi C 8, No. 7-8, 2044-2046 (2011)

  • M. Eickelkamp, M. Weingarten, L. Rahimzadeh Khoshroo, H. Behmenburg, M. Heuken, H. Kalisch, R. H. Jansen, A. Vescan
    On the Thermal Oxidation of AlInN/AlN/GaN Heterostructures
    Phys. Status Solidi C 8, No. 7–8, 2213–2215 (2011)

  • D. Fahle, H. Behmenburg, C. Mauder, H. Kalisch, R. H. Jansen, H. Kitahata, D. Brien, G. Strauch, D. Schmitz, M. Heuken, A. Vescan
    Growth of GaN in a Planetary MOCVD Hotwall System
    Phys. Status Solidi C 8, No. 7–8, 2041–2043 (2011)

  • C. Mauder, B. Reuters, H. Behmenburg, R. A. De Souza, J. F. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, R. H. Jansen
    Mechanisms of Impurity Incorporation during MOVPE Growth of m-plane GaN Layers on LiAlO2
    physica status solidi (c) 8, 2050-2052 (2011)

  • E. Sakalauskas, H. Behmenburg, P. Schley, G. Gobsch, C. Giesen, H. Kalisch, R. H. Jansen, M. Heuken, R. Goldhahn
    Dielectric function of Al-rich AlInN in the range 1–18 eV
    Phys. Status Solidi A 208, No. 7, 1517–1519 (2011)

  • M.Slawinski, D. Bertram, M. Heuken, H. Kalisch, A. Vescan
    Electrothermal characterization of organic light-emitting diodes employing finite-element simulation
    Organic Electronics 12 (2011) 1399–1405

  • F. Lindla, M. Boesing, P. van Gemmern, D. Bertram, D. Keiper, M. Heuken, H. Kalisch, R. H. Jansen
    Employing exciton transfer molecules to increase the lifetime of phosphorescent red organic light emitting diodes
    Appl. Phys. Lett. 98, 173304 (2011)

  • F. Lindla, M. Boesing, C. Zimmermann, P. van Gemmern, D. Bertram, D. Keiper, M. Heuken, H. Kalisch, R. H. Jansen
    Hybrid white organic light-emitting diode with a mixed-host interlayer processed by organic vapor phase deposition
    J. of Photon. for Energy 1, 011013 (2011)

  • H. Behmenburg, C. Giesen, R. Srnanek, J. Kovac, H. Kalisch, M. Heuken, R. H. Jansen
    Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
    Journal of Crystal Growth 316, 42-45, (2011)

  • C. Mauder, B. Reuters, K. R. Wang, D. Fahle, A. Trampert, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, R. H. Jansen
    Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
    Journal of Crystal Growth 315, 246-249 (2011)

  • C. Mauder, I. D. Booker, D. Fahle, H. Boukiour, H. Behmenburg, L. Rahimzadeh Khoshroo, J. F. Woitok, A. Vescan, M. Heuken, H. Kalisch, R. H. Jansen
    On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
    Journal of Crystal Growth 315, 220-223 (2011)

  • F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, V. Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, J. C. De Jaeger
    RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate
    Electronics Letters 47 , 212 (2011)

2010

  • E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R. H. Jansen, J. Bläsing, A. Dadgar, A. Krost, R. Goldhahn
    Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
    J. Phys. D: Appl. Phys. 43 (2010) 365102

  • N. Ketteniss, L. Rahimzadeh Khoshroo, M. Eickelkamp, M. Heuken, H. Kalisch, R. H. Jansen, A. Vescan
    Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
    Semicond. Sci. Technol. 25 075013 (2010)

  • K. R. Wang, M. Ramsteiner, C. Mauder, Q. Wan, T. Hentschel, H. T. Grahn, H. Kalisch, M. Heuken, R. H. Jansen, A. Trampert
    Striated surface morphology and crystal orientation of m-plane GaN films grown on LiAlO2
    Appl. Phys. Lett. 96, 231914 (2010)

  • C. Mauder, B. Reuters, L. Rahimzadeh Khoshroo, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. Heuken, H. Kalisch, R. H. Jansen
    Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
    Journal of Crystal Growth 312, 1823-1827 (2010)

  • M. Eickelkamp, D. Fahle, J. Lindner, M. Heuken, C. Lautensack, H. Kalisch, R. H. Jansen, A. Vescan
    Impact of Gate Dielectric Thickness on the Electrical Properties of AlGaN/GaN MISHFETs on Si(111) Substrate
    physica status solidi (a), 207: 1342-1344 (2010)

  • H. Behmenburg, L. Rahimzadeh Khoshroo, C. Mauder, N. Ketteniss, K. H. Lee, M. Eickelkamp, M. Brast, D. Fahle, J. F. Woitok, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen
    In-situ SiN passivation of AlInN/GaN heterostructures by MOVPE
    physica status solidi (c), 7: 2104-2106 (2010)

  • C. Mauder, K. R. Wang, B. Reuters, H. Behmenburg, L. Rahimzadeh Khoshroo, Q. Wan, A. Trampert, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. Heuken, H. Kalisch, R. H. Jansen
    Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates
    physica status solidi (b), 247: 1750-1752 (2010)

  • I. Booker, L. Rahimzadeh Khoshroo, J. F. Woitok, V. Kaganer, C. Mauder, H. Behmenburg, J. Gruis, M. Heuken, H. Kalisch, R. H. Jansen
    Dislocation Density Assessment Via HRXRD GaN Rocking Curve Scans
    physica status solidi (c), 7: 1787-1789 (2010)

  • D. R. Hang, M. M. C. Chou, C. Mauder, M. Heuken
    MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates
    Journal of Crystal Growth 312, No. 8, 1329-1333 (2010)

  • L. Rahimzadeh Khoshroo, N. Ketteniss, C. Mauder, H. Behmenburg, J. F. Woitok, I. Booker, J. Gruis, M. Heuken, A. Vescan, H. Kalisch, R. H. Jansen
    Quaternary nitride heterostructure field effect transistors
    physica status solidi (c), 7: 2001-2003 (2010)

2009

  • F. Lindla, M. Boesing, C. Zimmermann, F. Jessen, P. van Gemmern, D. Bertram, D. Keiper, N. Meyer, M. Heuken, H. Kalisch, R. H. Jansen
    Highly Efficient Yellow Organic Light Emitting Diode based on a Layer-Cross Faded Emission Layer Allowing Easy Color Tuning
    Appl. Phys. Lett. 95, 213305 (2009)

  • M. Eickelkamp, N. Ketteniß, C. Lautensack, A. Noculak, H. Kalisch, R. H. Jansen, A. Vescan
    Processing Approaches of AlGaN/GaN Metal Insulator Semiconductor Hetero Field Effect Transistors (MISHFET) on Si (111) Substrates
    physica status solidi (c), 6: S1033-S1036 (2009)

  • D. Gregušová, R. Stoklas, M. Eickelkamp, A. Fox, J. Novák, A. Vescan, D. Grützmacher, P. Kordoš
    Characterization of AlGaN/GaN MISHFETs on Si substrate by static and high-frequency measurements
    2009 Semicond. Sci. Technol. 24 075014

  • H. Behmenburg, L. Rahimzadeh Khoshroo, M. Eickelkamp, C. Mauder, M. Fieger, N. Ketteniß, J. Woitok, D. Wamwangi, M. Wuttig , M. Heuken, A. Vescan, H. Kalisch, R. H. Jansen
    Influence of barrier thickness on AlInN/AlN/GaN heterostructure and device properties
    physica status solidi (c), 6: S1041-S1044 (2009)

  • A. Vescan, H. Hardtdegen, N. Ketteniß, M. Eickelkamp, A. Noculak, J. Goliasch, M. v. d. Ahe, H. L. Bay, T. Schäpers, H. Kalisch, D. Grützmacher, R. H. Jansen
    Study on Growth and Electrical Performance of Double-Heterostructure AlGaN/GaN/AlGaN Field-Effect-Transistors
    physica status solidi (c), 6: S1003-S1006 (2009)

  • C. Mauder, L. Rahimzadeh Khoshroo, H. Behmenburg, B. Reuters, M. Bösing, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, A. Kharchenko, J. F. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, R. H. Jansen
    Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2
    physica status solidi (c), 6: S482-S485 (2009 )

  • L. Rahimzadeh Khoshroo, C. Mauder, H. Behmenburg, J. Woitok, W.Zander, J. Gruis, B. Reuters, J. Schubert, A. Vescan, M. Heuken, H. Kalisch, R. H. Jansen
    Epitaxy and characterisation of AlInGaN heterostructures for HEMT application
    physica status solidi (c), 6: S470–S473 (2009)

2008

  • C. Mauder, L. Rahimzadeh Khoshroo, H. Behmenburg, T. C. Wen, Y. Dikme, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, A. Kharchenko, J. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, R. H. Jansen
    Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates
    Journal of Crystal Growth (IC-MOVPE special issue) Volume 310, 4976-4978 (2008)

  • R. Stoklas, D. Gregušová, J. Novák, A. Vescan, P. Kordoš
    Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis
    Appl. Phys. Lett., 93, 124103 (2008)

  • M. Fieger, M. Eickelkamp, W. Zhang, L. Rahimzadeh Khoshroo, C. Mauder, Y. Dikme, M. Heuken, A. Noculak, H. Kalisch, R. H. Jansen, A. Vescan
    AlInN/GaN HEMTs on Sapphire: Processing, DC- and Pulsed Characterisation
    physica status solidi (c), 5: 1926-1928 (2008)

  • H. Behmenburg, T. C. Wen, Y. Dikme, C. Mauder, L. Rahimzadeh Khoshroo, M. M. C. Chou, M. V. Rzheutskii, E. V. Lutsenko, G. P. Yablonskii, J. Woitok, H. Kalisch, R. H. Jansen, M. Heuken
    m-Plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE
    physica status solidi (b), 245: 893-895 (2008)

  • L. Rahimzadeh Khoshroo, C. Mauder, W. Zhang, M. Fieger, M. Eickelkamp, Y. Dikme, J. Woitok, P. Niyamakom, H. L. Bay, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen
    Optimisation of AlInN/GaN HEMT Structures grown by MOVPE
    physica status solidi (c), 5: 2041-2043 (2008)

  • C. Mauder, L. Rahimzadeh Khoshroo, M. V. Rzheutski, E. V. Lutsenko, G. P. Yablonskii, V. I. Kozlovsky, J. Woitok, Y. Dikme, M. Heuken, H. Kalisch, R. H. Jansen
    MOVPE growth and investigation of AlInN/AlN multiple quantum wells
    physica status solidi (c), 5: 1553-1555 (2008)

2007

  • M. Fieger, M. Eickelkamp, L. Rahimzadeh Khoshroo, Y. Dikme, H. Kalisch, M. Heuken, R. H. Jansen, A. Vescan
    MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on Silicon Substrates
    Journal of Crystal Growth, 298, 843-847, (2007)

2006

  • Philipp van Gemmern, Volker van Elsbergen, Stefan Peter Grabowski, Herbert Boerner, Hans-Peter Löbl, Heinrich Becker, Holger Kalisch, Michael Heuken, Rolf H. Jansen
    Influence of carrier conductivity and injection on efficiency and chromaticity in small-molecule white organic light-emitting diodes based on 4,4’-bis(2,2’-biphenylvinyl)-1,1’-spirobiphenyl and rubrene
    J. Appl. Phys. 100, 123707 (2006)

  • Y. Dikme, M. Fieger, M. Eickelkamp, C. Giesen, E. V. Lutsenko, G. P. Yablonskii, A. Szymakowski, F. O. Jessen, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen
    Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates
    physica status solidi (c), 3: 2342-2345 (2006)

2005


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