Pressespiegel

Semiconductor-Today (09.05.2012):
Plasma oxidation of aluminium for insulated nitride transistor gates

Semiconductor-Today (23.04.2012):
More polarization engineering enhancement in nitride semi HFETs

Semiconductor-Today (10.04.2012):
Polarization matching as a route to nitride semiconductor transistor enhancement

Semiconductor-Today (10.12.2011):
Digital etching for damage-free gate recess in nitride transistors

Semiconductor-Today (09.11.2011):
Increasing power density for InAlN/GaN HEMTs on sapphire

Seminar für Hochleistungselektronik

Geänderter Termin!!! Seminar am Mittwoch 16.05.2012, 15:00 Uhr, S3, Werkstattgebäude am WSH

Device properties of AlGaN/GaN-based MIS heterostructures with plasma-oxidised AlOx/TiOx as gate dielectric
Herwig Hahn